发明名称 |
METHOD FOR FORMING DIELECTRIC LAYER, AND DEVICE RELEVANT THERETO |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a dielectric layer, and a device relevant thereto. SOLUTION: The dielectric layer is formed by depositing a dielectric layer to a middle thickness and applying a nitriding treatment on the middle thickness dielectric layer. Then, the dielectric layer is deposited to a desired final thickness. COPYRIGHT: (C)2008,JPO&INPIT
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申请公布号 |
JP2007281493(A) |
申请公布日期 |
2007.10.25 |
申请号 |
JP20070122085 |
申请日期 |
2007.05.07 |
申请人 |
INTEL CORP |
发明人 |
KUSE RONALD;YASUDA TETSUJI |
分类号 |
H01L21/316;H01L21/318;H01L21/205;H01L21/28;H01L29/51;H01L29/78 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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