发明名称 METHOD FOR FORMING DIELECTRIC LAYER, AND DEVICE RELEVANT THERETO
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a dielectric layer, and a device relevant thereto. SOLUTION: The dielectric layer is formed by depositing a dielectric layer to a middle thickness and applying a nitriding treatment on the middle thickness dielectric layer. Then, the dielectric layer is deposited to a desired final thickness. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007281493(A) 申请公布日期 2007.10.25
申请号 JP20070122085 申请日期 2007.05.07
申请人 INTEL CORP 发明人 KUSE RONALD;YASUDA TETSUJI
分类号 H01L21/316;H01L21/318;H01L21/205;H01L21/28;H01L29/51;H01L29/78 主分类号 H01L21/316
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