| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem that in a conventional solid-state imaging apparatus for transferring photoelectrically converted charges to a p-type minute region, the capacity of the p-type minute region is varied due to variation in the shape of the p-type minute region or variation in a distance between the p-type minute region and a source region, and thereby variation in an output signal voltage is increased. SOLUTION: Photoelectrically converted charges accumulated in a buried region 6 are transferred and accumulated to/in a source neighborhood area 4 through a charge transfer channel region 8. Therein, overlapped dimensions d3, d4 between the transfer channel regions 8 and ring-shaped gate electrodes 1 are determined by ion penetration depth from the outer periphery of the ring-shaped gate electrodes 1 and are almost the same value. Since the widths W1, W2 of the ring-shaped gate electrodes 1 are formed by the photo-process and etching of the same process by using photomasks of the same dimensions, the widths W1, W2 are regarded as almost the same values. Consequently the overlapped dimensions d1, d2 of the source neighborhood area 4 and the ring-shaped gate electrodes 1 are almost equal without being influenced by pattern matching errors in the photo-process. COPYRIGHT: (C)2008,JPO&INPIT
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