SEMICONDUCTOR LASER DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To attain a semiconductor laser device in which a peeling at interface between a current block layer and a clad layer, and a loss of the clad layer hardly occur and a stable element characteristic can be obtained when cleaving a ridge-like regrowth type semiconductor laser. SOLUTION: The semiconductor laser device has a semiconductor laminated layers 10 which is composed of a group III-V nitride semiconductor containing an active layer formed on a substrate. The semiconductor laminated layers 10 have a current block layer 23 having an opening exposing the upper surface of the semiconductor laminated layers 10 and a protection layer 24 composed of a group III-V nitride compound continuously covering at least a part of the current block layer 23 along the opening formed thereon. A ridge-like upper clad layer 25 is formed on an area exposed from the opening of the semiconductor laminated layers 10 by regrowth. COPYRIGHT: (C)2008,JPO&INPIT