| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can suppress a drop in drain current (Ids) and reduce gate induced drain leak current (GIDL), and to provide a semiconductor device. SOLUTION: The semiconductor device is provided with a transistor 100 which is formed in a multilayer film substrate including an insulation layer 3 provided on a supporting substrate, and a semiconductor layer 5 provided on the insulation layer 3. A gate insulation film 11b of a first area of the transistor 100 wherein a gate electrode 20 and an LDD layer 43 are overlapped in top view is made larger in thickness than a gate insulation film 11c of a second area wherein the gate electrode 20 and its channel area 5a are overlapped in top view. Because of such the structure, an electric field applied to drain from the gate electrode can be reduced, and the curvature of energy level end of a drain conductive band can be minimized. COPYRIGHT: (C)2008,JPO&INPIT
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