发明名称 |
Multi-bit non-volatile memory device, method of operating the same, and method of manufacturing the multi-bit non-volatile memory device |
摘要 |
Disclosed are a multi-bit non-volatile memory device, a method of operating the same, and a method of manufacturing the multi-bit non-volatile memory device. A unit cell of the multi-bit non-volatile memory device may be formed on a semiconductor substrate may include: a plurality of channels disposed perpendicularly to the upper surface of the semiconductor substrate; a plurality of storage nodes disposed on opposite sides of the channels perpendicularly the upper surface of the semiconductor substrate; a control gate surrounding upper portions of the channels and the storage nodes, and side surfaces of the storage nodes; and an insulating film formed between the channels and the storage nodes, between the channels and the control gate, and between the storage nodes and the control gate.
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申请公布号 |
US2007247913(A1) |
申请公布日期 |
2007.10.25 |
申请号 |
US20070812574 |
申请日期 |
2007.06.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK YOON-DONG;SEO SUN-AE;CHO CHOONG-RAE;KIM WON-JOO;SHIN SANG-MIN |
分类号 |
G11C11/02;H01L21/8244;H01L27/11 |
主分类号 |
G11C11/02 |
代理机构 |
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主权项 |
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地址 |
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