发明名称 |
Method for Hard Mask CD Trim |
摘要 |
Broadly speaking, methods and an apparatus are provided for removing an inorganic material from a substrate. More specifically, the methods provide for removing the inorganic material from the substrate through exposure to a high density plasma generated using an inductively coupled etching apparatus. The high density plasma is set and controlled to isotropically contact particular regions of the inorganic material to allow for trimming and control of a critical dimension associated with the inorganic material.
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申请公布号 |
US2007249177(A1) |
申请公布日期 |
2007.10.25 |
申请号 |
US20070767339 |
申请日期 |
2007.06.22 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
KOEMTZOPOULOS C. R.;GANGADHARAN SHIBU;LEE CHRIS G.;MILLER ALAN |
分类号 |
H01L21/302;H01L21/3065;H01L23/00 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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