THIN-FILM CAPACITOR WITH A FIELD MODIFICATION LAYER AND METHODS FOR FORMING THE SAME

摘要

A method for forming a capacitor includes providing a metal-containing bottom electrode (12), forming a capacitor insulator (14) over the metal-containing bottom electrode (12), forming a metal-containing top electrode (18) over the capacitor insulator (14), and forming a dielectric-containing field modification layer (22) over the capacitor insulator (14) and at least partially surrounding the metal-containing top electrode (18). Forming the dielectric-containing field modification layer (22) may include oxidizing a sidewall (22) of the metal-containing field modification layer (18). A barrier layer (16) may be formed over the capacitor insulator (14) prior to forming the metal-containing top electrode (18).