| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element with a large light emission output, inexpensive, and with good productivity; and to provide its manufacturing method. <P>SOLUTION: The semiconductor light emitting element 1 has an active layer 8 serving as a light emitting layer, and electrode layers 5 and 7 formed on both sides of the active layer 8. At least one of the electrode layers 5 and 7 is a transparent electrode layer 5, and at least one of surfaces of the layer 5 has a texture form. If a particle diameter of the texture of the layer 5 is larger than λ/(4×n) (where λ refers to a wavelength with which luminous intensity of the element 1 is the maximum, and n refers to a refractive index of the transparent electrode layer 5), the light emission from the element 1 can be efficiently emitted to the surface of the element to increase the light emission output. <P>COPYRIGHT: (C)2008,JPO&INPIT |
