| 摘要 |
A method of programming data regions in a nitride read-only memory cell that, in an erased state, exhibits a low V<SUB>t </SUB>value by first programming a data region that is to be programmed to a highest V<SUB>t </SUB>value. Remaining data regions in the nitride read-only memory cell are programmed in a time order according to their descending V<SUB>t </SUB>values. For a nitride read-only memory cell that, in an erased state, exhibits a high V<SUB>t </SUB>value, a data region that is to be programmed to a lowest V<SUB>t </SUB>value is programmed first with remaining data regions programmed in a time order according to their ascending V<SUB>t </SUB>values.
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