| 摘要 |
The present invention generally relates to a liquid crystal panel using a thin film transistor and a manufacturing method thereof, and more specifically to a liquid crystal panel using a thin film transistor and a manufacturing method thereof for improving an opening ratio by forming a storage capacitor under a channel. The present invention has suggested a method for effectively contacting an upper electrode for forming a capacitor with a lower electrode since the storage capacitor is located under the channel. Compared to a prior art in which one of storage capacitor electrodes is formed side by side with a channel of a thin film transistor, capacitor electrodes formed according to the present invention are located near to a substrate, thereby forming contact electrodes in many times without forming them one time.
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