MAGNETIC RANDOM ACCESS MEMORY AND METHOD FOR MANUFACTURING THE SAME

摘要

This invention provides a magnetic random access memory comprising a magnetic recording layer comprising a magnetization reversion region having reversible magnetization and a spin polarization current injection region for injecting a spin polarization current in an in-plane direction in the magnetization reversion region. The magnetic random access memory further comprises a magnetization fixation layer having fixed magnetization and a tunnel barrier layer provided between the magnetization reversion region and magnetization fixation layer. At least a part of the magnetization reversion region is formed of any of (a) a first composite ferromagnetic material obtained by compositing an unoxidized metallic ferromagnetic material with an oxide of a nonmagnetic material having a lower oxide production energy than the metallic ferromagnetic material, (b) a second composite ferromagnetic material obtained by compositing an unnitrided metallic ferromagnetic material with a nitride of a nonmagnetic material having a lower nitride production energy than the metallic ferromagnetic material, and (c) a third composite ferromagnetic material obtained by compositing an uncarbonized metallic ferromagnetic material with a carbide of a nonmagnetic material having a lower carbide production energy than the metallic ferromagnetic material.