发明名称 POSITIVE RESIST COMPOSITION AND PATTERN FORMATION METHOD USING THE POSITIVE RESIST COMPOSITION
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive resist composition for satisfying all of line edge roughness (LWR), exposure latitude (EL), PEB temperature dependency and pattern collapsing in a high order, and a pattern formation method using the positive resist composition. <P>SOLUTION: The positive resist composition comprises: (A) a resin which increases solubility in an alkali developing solution by an action of an acid and comprises a repeating unit containing a lactone structure and a cyano group, a repeating unit containing a first group of a specific structure and a repeating unit containing a second group of a specific structure which is different from the first group; (B) a compound which generates an acid upon irradiation of an actinic ray or a radiation; and (C) a solvent. The pattern formation method using the positive resist composition is also provided. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007279662(A) 申请公布日期 2007.10.25
申请号 JP20060245681 申请日期 2006.09.11
申请人 FUJIFILM CORP 发明人 IWATO KAORU;KODAMA KUNIHIKO;YOSHIDA YUKO;YAMAMOTO KEI
分类号 G03F7/039;G03F7/004;H01L21/027 主分类号 G03F7/039
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