| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a new microwave plasma treatment device which is easy in control of generation location of plasma and can generate plasma with good uniformity and high strength at the arbitrary location on an object to be treated. <P>SOLUTION: The microwave plasma treatment device comprises a cylindrical vacuum chamber 5 to generate microwave plasma, a microwave source 2 and a waveguide 3 to introduce microwave energy into the vacuum chamber 5, a treated object support 7 installed in the vacuum chamber 5, and a conductor 8 installed in the vacuum chamber coaxially. The conductor 8 is installed so that one end face may be located in the vicinity of the treated object support 7 and an end part member 8b of the conductor 8 located on the treated object support 7 side is exchangeable. <P>COPYRIGHT: (C)2008,JPO&INPIT |
