| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma treatment device securing a high-speed treatment capacity at low power in a simple device structure, realizing a uniform treatment, and capable of corresponding even to a large-scale treated object. <P>SOLUTION: Gas is supplied from gas flow channels (slits) 9a, 9b, 9c, 9d to a discharge space A, and at the same time, a high-frequency power is supplied from a high-frequency power source 11 to power supply electrodes 3a, 3b and ground electrodes 4a, 4b, 4c, 4d to generate plasma at discharge spaces Ba, Bb, Bc, Bd where the power supply electrodes 4a, 4b, 4c, 4d and the ground electrodes 4a, 4b, 4c, 4d oppose each other, and the plasma is sent into a plasma treatment space A to treat a treated object 1 with. <P>COPYRIGHT: (C)2008,JPO&INPIT |
