| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor laser device which can prevent the aggravation of solder wettability in the die bond of a semiconductor laser device and can prevent the degradation of properties of the semiconductor device by removing a dielectric film on the electrode of the epitaxial growth surface side after performing dielectric film deposition to the light emission end face of the semiconductor laser device. SOLUTION: A p-side electrode 5 is formed on the epitaxial growth surface side of a semiconductor laser wafer. A Ti protection layer 51 is formed on the p-side electrode 5. The semiconductor laser wafer in which the p-side electrode 5 and the Ti protection layer 51 is formed is cut along with one direction, to fabricate a semiconductor laser bar 7 which makes the cutting plane by this cutting be a light emission end face 61. After forming an Al<SB>2</SB>O<SB>3</SB>dielectric film 71 on the light emission end face 61 of the semiconductor laser bar 7, the Ti protection layer 51 is removed. The Ti protection layer 51 can be removed while the Al<SB>2</SB>O<SB>3</SB>dielectric film 71 is left on the light emission end face 61. COPYRIGHT: (C)2008,JPO&INPIT
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