发明名称 SEMICONDUCTOR DEVICE AND ITS EVALUATION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device and its evaluation method capable of evaluating in a short time a leakage current in the 10 pA order caused by highness of a resistance value of a resistance element. SOLUTION: The semiconductor device for evaluating a leakage current includes the first PMOSFET 101, the first wiring 102, a potential monitoring circuit 103, the first NMOSFET 104, the third PMOSFET 105, a signal wire 106, the second wiring 107, the resistance element, and the second PMOSFET 109. A leakage current quantity when a wiring capacitance of the second wiring 107 is discharged through the resistance element 108 is converted into a potential change resulting from discharge of a wiring capacitance of the first wiring 102 and evaluated by the potential monitoring circuit 103. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007278798(A) 申请公布日期 2007.10.25
申请号 JP20060104441 申请日期 2006.04.05
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 AWAMURA SATOSHI;MORIWAKI NOBUYUKI;FUJINAGA KIYOO
分类号 G01R31/26;H01L21/822;H01L27/04 主分类号 G01R31/26
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