DETECTION METHOD OF DISLOCATION, MEASURING METHOD OF NUMBER OF DISLOCATION, MEASURING METHOD OF DISLOCATION DENSITY, AND CALCULATION METHOD OF GAN CRYSTAL SUBSTRATE AND DISLOCATION DENSITY

摘要

PROBLEM TO BE SOLVED: To provide a detection method capable of measuring accurate dislocation density even if the off angle to the (0001) face at the top-surface of a GaN crystal substrate is larger than 0.5°, a measuring method of the number of dislocation and dislocation density using the detection method, and a calculation method of the GaN crystal substrate of which dislocation density is measured by the measuring method of dislocation density and dislocation density. SOLUTION: This detection method of dislocation contains a process in which the off angle to the (0001) face at the top-surface of a GaN crystal substrate is reduced to not greater than 0.5°and a process in which the top-surface of the GaN crystal substrate is etched by an etching liquid. This measuring method of the number of dislocation and dislocation density uses the detection method, and a calculation method of the GaN crystal substrate of which dislocation density is measured by the measuring method of dislocation density and dislocation density is also provided. COPYRIGHT: (C)2008,JPO&INPIT