| 摘要 |
A power semiconductor component ( 2 ) has a semiconductor body with a front face ( 7 ) and a rear face ( 9 ). The front face ( 7 ) has a front-face metallization ( 8 ), which provides at least one first contact pad ( 11 ). A structured metal seed layer ( 14 ) is provided as the front-face metallization ( 8 ), is arranged directly on the semiconductor body, and has a thickness d, where 1 nm<=d<=0.5 mum.
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