发明名称 |
Method of fabricating a recess channel transistor |
摘要 |
A method of fabricating a recess channel transistor is provided. First, a hard mask is formed on a doped-semiconductor layer and a substrate. The doped-semiconductor layer and the substrate are etched to form a trench and define a source/drain in the doped-semiconductor layer. An implantation process is performed with a tilt angle on sidewalls of the trench to form an implant area. A thermal oxidation process is performed to form an oxide layer. The oxide layer comprises a first thickness on the source/drain in the sidewalls of the trench and a second thickness on the other portion in the sidewalls of the trench.
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申请公布号 |
US2007249123(A1) |
申请公布日期 |
2007.10.25 |
申请号 |
US20060491137 |
申请日期 |
2006.07.24 |
申请人 |
PROMOS TECHNOLOGIES INC. |
发明人 |
CHOU JIH-WEN;CHU CHIH-HSUN;SHU HSIU-CHUAN |
分类号 |
H01L21/336;H01L21/3205;H01L21/425 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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