STRESS-APPLIED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is a stress-applied semiconductor device comprising a gate electrode formed on a silicon substrate via a gate insulating film, a first and a second groove formed apart from each other in the silicon substrate respectively on a first and a second side of the gate electrode, and epitaxial layers respectively having a first and a second conductivity type which are composed of a mixed crystal of Si and another group IV element and respectively filled into the first and second grooves. In this stress-applied semiconductor device, the gate electrode is made of a polycrystalline substance composed of a mixed crystal of Si and another element.