FABRICATING METHOD OF PMOS THIN FILM TRANSISTOR

摘要

A method of manufacturing a TFT(Thin Film Transistor) is provided to restrain the generation of a leakage current, to decrease a driving voltage and to enhance device characteristics by removing a small amount of metallic catalyst from a semiconductor layer through the insertion of a gettering process material into source and drain regions of the semiconductor layer and heat treatment. An amorphous silicon layer is formed on a substrate(101). A capping layer is formed on the amorphous silicon layer. A metal catalyst is deposited on the capping layer. First heat treatment is performed on the resultant structure in order to diffuse the metal catalyst to an interface of the amorphous silicon layer through the capping layer. Second heat treatment is performed on the resultant structure. At this time, the amorphous silicon layer is changed into a polycrystalline silicon layer by the diffused metal catalyst. The capping layer is removed therefrom. A semiconductor layer(110') is formed by patterning the polycrystalline silicon layer selectively. A gate insulating layer(120) and a gate electrode are formed on the substrate. A P type ions are implanted into the semiconductor layer. A gettering process material is implanted into the semiconductor layer. Third heat treatment is performed on the resultant structure in order to remove the metal catalyst therefrom.