METHOD FOR MANUFACTURING SCHOTTKY BARRIER TUNNEL TRANSISTOR
摘要
A method of manufacturing a schottky barrier tunnel transistor is provided to prevent the damage of a spacer and to restrain the generation of a gate leakage current due to the damage of the spacer by forming a gate electrode layer and the spacer after forming source and drain regions using a silicide process. A buried oxide layer(110) is supported a support substrate. A silicon pattern(111A) and a sacrificial pattern are formed on the buried oxide layer. Source and drain regions(115) are formed on the buried oxide layer at both sidewalls of the silicon pattern. The source and drain regions are made of a metal film. An upper portion of the silicon pattern is exposed to the outside by removing the sacrificial pattern therefrom. A gate insulating layer and a gate electrode are sequentially formed on the exposed upper portion of the silicon pattern. A spacer is formed at both sidewalls of the gate electrode.
申请公布号
KR100770013(B1)
申请公布日期
2007.10.25
申请号
KR20060120565
申请日期
2006.12.01
申请人
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE