| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory which can write information and obtain sufficiently large output signal with comparatively lower power consumption, even if the memory has a large capacity. SOLUTION: The magnetic memory comprises magnetoresistance effect elements 2a, 2b and a common wiring 3 provided between their elements. The element 2a comprises a pin layer 12a, including a laminate for laminating even number ferroelectric layers 21 via non-magnetic layers 22 and a free layer 11a, including a laminate laminating a ferroelectric layer or a plurality of ferroelectric layers via non-magnetic layers. The element 2b comprises a pin layer 12b, including a laminate laminating a ferroelectric 21 or odd number (three or more) ferroelectric layers 21 via non-magnetic layers 22 and a free layer 11b, including a laminate laminating a ferroelectric layer or a plurality of ferroelectric layers via non-magnetic layers. The number of ferroelectric layers, included in the free layer 11a and the number of ferroelectric layers included in the free layer 11b, are odd numbered or even numbered ones. COPYRIGHT: (C)2008,JPO&INPIT
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