发明名称 |
Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors |
摘要 |
An opto-thermal annealing method for forming a field effect transistor uses a reflective metal gate so that electrical properties of the metal gate and also interface between the metal gate and a gate dielectric are not compromised when opto-thermal annealing a source/drain region adjacent the metal gate. Another opto-thermal annealing method may be used for simultaneously opto-thermally annealing: (1) a silicon layer and a silicide forming metal layer to form a fully silicided gate; and (2) a source/drain region to form an annealed source/drain region. An additional opto-thermal annealing method may use a thermal insulator layer in conjunction with a thermal absorber layer to selectively opto-thermally anneal a silicon layer and a silicide forming metal layer to form a fully silicide gate.
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申请公布号 |
US2007249131(A1) |
申请公布日期 |
2007.10.25 |
申请号 |
US20060408522 |
申请日期 |
2006.04.21 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ALLEN SCOTT D.;CABRAL CYRIL JR.;DEZFULIAN KEVIN K.;FANG SUNFEI;GREENE BRIAN J.;JAMMY RAJARAO;LAVOIE CHRISTIAN;LUO ZHIJIONG;NG HUNG;SUNG CHUN-YUNG;WANN CLEMENT H.;ZHU HUILONG |
分类号 |
H01L21/336;H01L21/44 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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