发明名称 |
ELECTRO-RESISTANCE ELEMENT AND ELECTRO-RESISTANCE MEMORY USING THE SAME |
摘要 |
An electro-resistance element that has a different configuration from conventional elements and is excellent in both affinity with semiconductor manufacturing processes and heat treatment stability under a hydrogen-containing atmosphere is provided. An electro-resistance element includes an electro-resistance layer that has two or more states in which electric resistance values are different and being switchable from one of the two or more states into another by applying a predetermined voltage or current. The electro-resistance layer includes first and second elements being capable of forming a nitride, and nitrogen.
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申请公布号 |
US2007246832(A1) |
申请公布日期 |
2007.10.25 |
申请号 |
US20070693960 |
申请日期 |
2007.03.30 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
ODAGAWA AKIHIRO;NAGANO YOSHIHISA |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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