发明名称 Semiconductor device
摘要 In the conventional technology, a region of larger data rate causes a varied level of the light exposure in the lithographic operation in the process for manufacturing the semiconductor device, causing a problem of allowing narrower process window. A semiconductor device includes interconnects (first interconnects) elongating along a first direction in a substrate surface of the substrate (transverse direction in the diagram), interconnects (second interconnects), elongating along the interconnects, and being spaced apart from the interconnects in plan view, and slit vias (slit-shaped via plugs), elongating along a second direction (longitudinal direction in the diagram) of directions in the substrate surface of the above-described substrate, which is a direction normal to the first direction, and being capable of electrically coupling the interconnect to the interconnect.
申请公布号 US2007249162(A1) 申请公布日期 2007.10.25
申请号 US20070785653 申请日期 2007.04.19
申请人 NEC ELECTRONICS CORPORATION 发明人 MATSUBARA YOSHIHISA
分类号 H01L21/4763;H01L23/48 主分类号 H01L21/4763
代理机构 代理人
主权项
地址