发明名称 SEMICONDUCTOR POWER MODULE
摘要 Use of Pb-free solder has become essential due to the environmental problem. A power module is formed by soldering substrates with large areas. It is known that in Sn-3Ag-0.5Cu which hardly creeps and deforms with respect to large deformation followed by warpage of the substrate, life is significantly shortened with respect to the temperature cycle test, and the conventional module structure is in the situation having difficulty in securing high reliability. Thus, the present invention has an object to select compositions from which increase in life can be expected at a low strain rate. In Sn solder, by doping In by 3 to 7% and Ag by 2 to 4.5%, the effect of delaying crack development at a low strain rate is found out, and as a representative composition stable at a high temperature, Sn-3Ag-0.5Cu-5In is selected. Further, for enhancement of reliability, a method for partially coating a solder end portion with a resin is shown.
申请公布号 US2007246833(A1) 申请公布日期 2007.10.25
申请号 US20070739122 申请日期 2007.04.24
申请人 发明人 SOGA TASAO;KAWASE DAISUKE;SUZUKI KAZUHIRO;MORISAKI EIICHI;SAITO KATSUAKI;SHIMOKAWA HANAE
分类号 H01L23/48 主分类号 H01L23/48
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