GaN SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LAMP

摘要

Provided is a method for manufacturing a gallium nitride compound semiconductor light emitting element having excellent light emitting characteristics and light extracting efficiency. A lamp is also provided. By such method, the GaN semiconductor light emitting element, which has at least a buffer layer, an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer on a substrate with uneven shape and translucency, is manufactured. The buffer layer is formed by a sputtering method using a sputtering apparatus having a swinging type magnetron magnetic circuit. Furthermore, the buffer layer is formed of AlN, ZnO, Mg and Hf.