CRYSTALLIZATION METHOD, THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, DISPLAY DEVICE, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a crystallization method, a method of manufacturing a thin-film transistor, the thin-film transistor, a display device, and a semiconductor device in which a TFT can be obtained with higher mobility and less unevenness in the mobility and threshold voltage property. SOLUTION: In the crystallization by irradiating a non-single semiconductor thin film of 40 to 100 nm provided on an insulation substrate with a laser light; a light intensity distribution having an inverse peak pattern is formed on the surface of the substrate, a light intensity gradient of the light intensity distribution is controlled, a crystal grain array is formed in which a crystal grain 4 is aligned having a longer shape in a crystal growth direction than in a widthwise direction and having a preferential crystal orientation (100) in a grain length direction, and the TFT is formed in which a source region and a drain region are formed so that current flows across a plurality of crystal grains of the crystal grain array in the crystal growth direction. COPYRIGHT: (C)2008,JPO&INPIT