发明名称 |
HIGH POWER VARIABLE SLIDE RF TUNER |
摘要 |
<p>A high power slide tuning capacitor (200) integrated into a circuit board adapted to function at RF and microwave frequencies. The capacitor (200) is comprised of a dielectric substrate (26) with a cavity (28) cut into a side of the substrate (26); a ground plane (24) mounted on a bottom surface of the dielectric substrate (26); a microstrip patch (22) mounted on a top surface of the dielectric substrate (26) and positioned above the cavity (28); and a movable dielectric stub (30) which engages the cavity (28) such that a variable length of the stub (30) is positioned beneath the microstrip patch (22). The microstrip patch (22) can be coupled to a desired circuit trace (20), effectively forming a shunt capacitor to ground.</p> |
申请公布号 |
WO03058656(A3) |
申请公布日期 |
2007.10.25 |
申请号 |
WO2003US00385 |
申请日期 |
2003.01.08 |
申请人 |
RAYTHEON COMPANY |
发明人 |
OBERT, THOMAS, L.;BROWN, KENNETH, W.;DRAKE, THOMAS, A. |
分类号 |
H01G5/04;H01P5/04;H01G5/013;H03F3/60;H05K1/16 |
主分类号 |
H01G5/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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