发明名称 HIGH POWER VARIABLE SLIDE RF TUNER
摘要 <p>A high power slide tuning capacitor (200) integrated into a circuit board adapted to function at RF and microwave frequencies. The capacitor (200) is comprised of a dielectric substrate (26) with a cavity (28) cut into a side of the substrate (26); a ground plane (24) mounted on a bottom surface of the dielectric substrate (26); a microstrip patch (22) mounted on a top surface of the dielectric substrate (26) and positioned above the cavity (28); and a movable dielectric stub (30) which engages the cavity (28) such that a variable length of the stub (30) is positioned beneath the microstrip patch (22). The microstrip patch (22) can be coupled to a desired circuit trace (20), effectively forming a shunt capacitor to ground.</p>
申请公布号 WO03058656(A3) 申请公布日期 2007.10.25
申请号 WO2003US00385 申请日期 2003.01.08
申请人 RAYTHEON COMPANY 发明人 OBERT, THOMAS, L.;BROWN, KENNETH, W.;DRAKE, THOMAS, A.
分类号 H01G5/04;H01P5/04;H01G5/013;H03F3/60;H05K1/16 主分类号 H01G5/04
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