发明名称 SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a means for preventing an increase of a chip area without enlarging a formation area of a desired electrode pad or without increasing the number of electrode pads, even if electrode pads of different current capacities to be transferred with an outside are formed. <P>SOLUTION: Fining of a metallic fine line is realized with reference to an electrode pad of a small current capacity to be transferred with an outside. Connection is performed for an electrode pad 1 of an IC chip 2 by a metallic fine line 5 of the same diameter. Meanwhile, in the electrode pad 1 for transferring a large current capacity with an outside, a bump electrode 13 is formed and a plurality of metallic fine lines 5 are connected. Consequently, a large current capacity can be transferred, and both a manufacturing cost and a chip area can be reduced. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007281509(A) 申请公布日期 2007.10.25
申请号 JP20070158205 申请日期 2007.06.15
申请人 SANYO ELECTRIC CO LTD;KANTO SANYO SEMICONDUCTORS CO LTD 发明人 TSUBONOYA MAKOTO
分类号 H01L25/04;H01L21/60;H01L25/18 主分类号 H01L25/04
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