发明名称 FIELD EFFECT TRANSISTOR HAVING GOLD LAYER, MICROFLUIDIC DEVICE HAVING THE SAME, AND METHOD FOR DETECTING ANALYTE CONTAINING THIOL GROUP BY UTILIZING FIELD EFFECT TRANSISTOR AND MICROFLUIDIC DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a field effect transistor having a gold layer, to provide a microfluidic device having the field effect transistor, and to provide a method for detecting an analyte containing a thiol group by utilizing the field effect transistor and the microfluidic device. <P>SOLUTION: The field effect transistor comprises a substrate made of a semiconductor material, a source region and a drain region that are formed separately each other in the substrate and are doped to a conductivity type that differs from that of the substrate, a channel region arranged between the source and drain regions, an insulating layer that is arranged on a channel region and is composed of an electrically insulating material, and a gate electrode separately arranged on the insulating layer. In the field effect transistor, a field effect transistor for detecting an analyte having a thiol group, further having a gold layer positioned on an insulating layer, the microfluidic device having the field effect transistor, and the method for detecting the analyte containing the thiol group by utilizing the field effect transistor and the microfluidic device are composed. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007279049(A) 申请公布日期 2007.10.25
申请号 JP20070103000 申请日期 2007.04.10
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 SHIM JEO-YOUNG;YOO KYU-TAE;LEE KYU-SANG;CHUNG WOON-SEOK;CHO YEON-JA;YOO CHANG-EUN
分类号 G01N27/414;G01N27/28;G01N37/00;H01L29/78 主分类号 G01N27/414
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