发明名称 Chip structure with half-tunneling electrical contact to have one electrical contact formed on inactive side thereof and method for producing the same
摘要 A method for producing a chip structure with one electrical contact formed on inactive side thereof includes by pre-forming at least one half-tunneling electrical contact to penetrate a processed substrate prepared for processing a chip, and when finishing processing the chip the half-tunneling electrical contact is without completely penetrated the whole chip, particularly one end of the half-tunneling electrical contact is exposed on the inactive side of the chip and formed as an electrical contact of the chip and the other end of the half-tunneling electrical contact is electrically connected to a circuit formed in the chip; the kind of chip having the half-tunneling electrical contact may provide with various layouts and designs of the electrical contacts to minimize the assembled volume of the chip, and the chips are easily stacked together or assembled into a System-In-Package (SIP) structure.
申请公布号 US2007249153(A1) 申请公布日期 2007.10.25
申请号 US20070785447 申请日期 2007.04.18
申请人 DONG WEN-CHANG 发明人 DONG WEN-CHANG
分类号 H01L21/44;H01L21/4763 主分类号 H01L21/44
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