| 摘要 |
A method for erasing a flash memory group is provided, which comprises the following steps. (a) Apply a erase (ERS) pulse to a first subset of the group. (b) Perform one of a soft program verification (SPGMV) and a tight soft program verification (TSPGMV) on the first subset of the group. (c) Repeat steps (a) and (b) until a first predetermined condition is true. (d) Perform an erase verification (ERSV) on a second subset of the group. (e) Repeat steps (a) to (d) until a second predetermined condition is true. And (f) fix bit line leakage in a third subset of the group with a slow program (SLPGM) and apply an ERS pulse to the third subset.
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