| 摘要 |
PROBLEM TO BE SOLVED: To prevent inhomogeneous composition of a ferrodielectric film in a film thickness direction in a ferrodielectric film capacitor to realize a capacitor having favorable electrical characteristics. SOLUTION: In a method of manufacturing a semiconductor device, a bottom electrode is formed on a semiconductor substrate (S51). Next, a first ferrodielectric film is formed on the bottom electrode by a CVD method using a first material gas (S53a). Next, a second ferrodielectric film is formed on the first ferrodielectric film by the CVD method using a second material gas (S53b). Next, an upper electrode is formed on the second ferrodielectric film. (S54)Here, the concentration of oxygen included in the first material gas used in the process (S53a) for forming the first ferrodielectric film is higher than that included in the second material gas used in the process (S53b) for forming the second ferrodielectric film. COPYRIGHT: (C)2008,JPO&INPIT
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