发明名称 |
Semiconductor on glass insulator made using improved thinning process |
摘要 |
Methods and apparatus for producing a semiconductor on glass (SiOG) structure include: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; and subjecting the at least one cleaved surface to a wet etching process.
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申请公布号 |
US2007249139(A1) |
申请公布日期 |
2007.10.25 |
申请号 |
US20070729895 |
申请日期 |
2007.03.29 |
申请人 |
GADKAREE KISHOR PURUSHOTTAM;MOORE MICHAEL JOHN;STOCKER MARK ANDREW;FENG JIANGWEI;MACH JOSEPH FRANK |
发明人 |
GADKAREE KISHOR PURUSHOTTAM;MOORE MICHAEL JOHN;STOCKER MARK ANDREW;FENG JIANGWEI;MACH JOSEPH FRANK |
分类号 |
H01L21/46 |
主分类号 |
H01L21/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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