发明名称 Semiconductor device and method for producing the same
摘要 A method for producing a semiconductor device of the present invention includes forming a surface electrode on a semiconductor element, forming a solder layer by plating on one principal surface of the surface electrode, mounting the semiconductor element on the sub-mount so that the solder layer contacts a principal surface of the sub-mount, and bonding the sub-mount and the semiconductor element to each other via the solder layer.
申请公布号 US2007246829(A1) 申请公布日期 2007.10.25
申请号 US20070820917 申请日期 2007.06.21
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 YAMANE KEIJI;UEDA TETSUO;MIYAMOTO TAKASHI;KIDOGUCHI ISAO
分类号 H01L23/52;H01L33/00;H01S5/02;H01S5/024;H01S5/042;H01S5/323 主分类号 H01L23/52
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