发明名称 |
Semiconductor device and method for producing the same |
摘要 |
A method for producing a semiconductor device of the present invention includes forming a surface electrode on a semiconductor element, forming a solder layer by plating on one principal surface of the surface electrode, mounting the semiconductor element on the sub-mount so that the solder layer contacts a principal surface of the sub-mount, and bonding the sub-mount and the semiconductor element to each other via the solder layer.
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申请公布号 |
US2007246829(A1) |
申请公布日期 |
2007.10.25 |
申请号 |
US20070820917 |
申请日期 |
2007.06.21 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
YAMANE KEIJI;UEDA TETSUO;MIYAMOTO TAKASHI;KIDOGUCHI ISAO |
分类号 |
H01L23/52;H01L33/00;H01S5/02;H01S5/024;H01S5/042;H01S5/323 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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