发明名称 |
Formation of high metallic content carbon nanotube structures |
摘要 |
Methods and associated structures of forming a microelectronic device are described. Those methods may include forming an opening in a substrate, placing at least one multi-walled CNT within the opening, and forming a carbide layer on the at least one multi-walled CNT.
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申请公布号 |
US2007248794(A1) |
申请公布日期 |
2007.10.25 |
申请号 |
US20060408745 |
申请日期 |
2006.04.21 |
申请人 |
GSTREIN FLORIAN;BLACKWELL JAMES M;MAJUMDAR AMLAN;DUBIN VALERY M |
发明人 |
GSTREIN FLORIAN;BLACKWELL JAMES M.;MAJUMDAR AMLAN;DUBIN VALERY M. |
分类号 |
B05D7/22;B32B3/10;B32B9/00;C23C16/00 |
主分类号 |
B05D7/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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