发明名称 Formation of high metallic content carbon nanotube structures
摘要 Methods and associated structures of forming a microelectronic device are described. Those methods may include forming an opening in a substrate, placing at least one multi-walled CNT within the opening, and forming a carbide layer on the at least one multi-walled CNT.
申请公布号 US2007248794(A1) 申请公布日期 2007.10.25
申请号 US20060408745 申请日期 2006.04.21
申请人 GSTREIN FLORIAN;BLACKWELL JAMES M;MAJUMDAR AMLAN;DUBIN VALERY M 发明人 GSTREIN FLORIAN;BLACKWELL JAMES M.;MAJUMDAR AMLAN;DUBIN VALERY M.
分类号 B05D7/22;B32B3/10;B32B9/00;C23C16/00 主分类号 B05D7/22
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