| 摘要 |
A method of fabricating a non-volatile memory is provided. The method includes providing a substrate. Next, a tunneling oxide layer is formed on the substrate and a surface nitridation process is performed to nitridize the upper surface of the tunneling oxide layer. A plurality of nanocrystals is formed on the nitridized surface of the tunneling oxide layer. Next, the surfaces of the nanocrystals are nitridized. An oxide layer and a conductive layer are formed in sequence over the tunneling oxide layer to cover the nanocrystals. Due to the formation of high-density nanocrystals as a charge storage medium, the properties of the memory are enhanced.
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