发明名称 Method to monitor critical dimension of IC interconnect
摘要 An example method of monitoring and measuring the line width of interconnects comprising the following steps. First, we measure an I-V profile of a sample interconnect structure to obtain a sample I-V profile. The I-V profile is comprised of leakage current measurements at two or more voltages. The sample interconnect structure is comprised of spaced lines having a line spacing. Next we compare the sample I-V profile with a reference I-V profile at a reference line spacing to determine if sample interconnect structure is not defective. If the sample I-V profile is similar to the reference I-V profile, then leakage currents for the sample interconnect structure are derived from the I-V profiles at a selected voltages. Then we calculate the line spacing of the sample interconnect structure using the sample I-V profile.
申请公布号 US2007247167(A1) 申请公布日期 2007.10.25
申请号 US20060398980 申请日期 2006.04.06
申请人 CHARTERED SEMICONDUCTOR MANUFACTURING LTD 发明人 QIAN HUA;CHUNG CHING T.
分类号 G01R31/02 主分类号 G01R31/02
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