PLATING OF A THIN METAL SEED LAYER

摘要

An apparatus and method for plating a metal layer onto a substrate is provided. A catholyte volume is positioned to receive a substrate for plating. An anolyte volume having one or more anode segments positioned therein is ionically separated from the catholyte volume. An auxiliary volume having an auxiliary electrode positioned therein is provided to be electrically isolated from the anolyte fluid volume and in ionic communication with the catholyte volume. A method of plating includes a first stage of plating a thin metal seed uniformly in the center and near the edges of the substrate by providing a current pulse from two power supplies which are in reverse electrical polarity with one anode segment and the auxiliary electrode. Thereafter, gap filling of features and bulk metal plating are performed by applying a second current pulse to all anode segments.