| 摘要 |
The invention relates to optoelectronics. A method for differential photoelectric cell (p-n-p-n type structure) control is as follows: the first layer of p-type, which is anode of p-n-p-n type structure or the last n-type layer, which is cathode of p-n-p-n type structure, is exposed with monochromatic light. The technical result is obtaining photo-emf of alternating polarity that gives possibility to obtain wider range of photo-emf from negative to positive values.
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