| 摘要 |
A photomask blank is provided to guarantee electrical conductivity and prevent charge-up in a photomask fabricating process by including a mask layer including a single layer made of a material containing transition metal, silicon and nitrogen or a plurality of layers including at least one layer made of a material containing transition metal, silicon and nitrogen and by having at least one chrome-based material layer. A mask layer(3) includes a single layer made of a material containing transition metal, silicon and nitrogen or a plurality of layers including at least one layer made of a material containing transition metal, silicon and nitrogen. At least one chrome-based material layer and the mask layer are included in a photomask blank for fabricating a photomask. In the material containing transition metal, silicon and nitrogen, the atom ratio of silicon to transition metal expressed as silicon/transition metal is not less than 1:1 and less than 4:1 and the content of nitrogen is from 5 atom percent to 40 atom percent. A chrome-based material layer can be formed between a transparent substrate(1) and the mask layer. |
