SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE

摘要

A semiconductor device is provided to improve interconnection of metal wirings by smoothing interlayer connection of metal wirings even if an F-doped silicon oxide is used. A silicon substrate(100) is prepared which includes a first metal wiring(110). An interlayer dielectric is formed on the silicon substrate. A first diffusion barrier layer(130) is formed on the interlayer dielectric, including silane. A contact plug for interlayer connection is formed in the interlayer dielectric and the first diffusion barrier layer. A second metal wiring(170) is formed on the first diffusion barrier layer and the contact plug. The contact plug in the interlayer dielectric and the first diffusion barrier layer can be formed by sequentially forming a second diffusion barrier layer(140) and a metal layer(160).