SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

A semiconductor device manufacturing method is provided to easily perform a following process and reduce the contact resistance of a semiconductor device by forming a polysilicon hard mask. A semiconductor device manufacturing method includes the steps of: forming an ILD(Inter Layer Dielectric) layer on a semiconductor substrate and performing CMP(Chemical Mechanical polish/planarization)(201); forming an polysilicon hard mask on the ILD layer for an SNC(Storage Node Contact)(202); forming the SNC on the polysilicon hard mask(203); coating the SNC with a photoresist(204); removing the photo resist and the polysilicon hard mask(205); forming an SNC spacer nitride layer on the SNC(206); and forming an SNC plug polysilicon(207).