| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a GaN-based semiconductor light emitting device and its manufacturing method. <P>SOLUTION: This GaN-based semiconductor light emitting device is equipped with an n-electrode, p-electrode, and n-type semiconductor layer, active layer and p-type semiconductor layer between the n-electrode and p-electrode. The p-electrode is equipped with a first electrode layer formed from Zn or Zn system alloy on the p-type semiconductor layer, a second electrode layer formed from Ag or Ag system alloy on the first electrode layer, and a third electrode layer formed from transparent conductive oxide on the second electrode layer. <P>COPYRIGHT: (C)2008,JPO&INPIT |
