| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which reduces an influence received by a semiconductor element when a radio wave is emitted from an antenna, and also to provide a manufacturing method therefor. <P>SOLUTION: The semiconductor device is constituted of: a semiconductor substrate 11 having the first face and the second face positioned in an opposite side of the first face; a penetrated-through wire 18 penetrated through the semiconductor substrate 11 from the first face up to the second face; the antenna 15 formed on the first face and connected electrically to the penetrated-through wire 18; an element forming layer 21 formed on the second face and including the semiconductor element connected electrically to the penetrated-through wire 18; a sealing film 25 formed on a second face side in the semiconductor substrate 11 to cover the element forming layer 21 including the semiconductor element; and an external terminal 24 with one end exposed from a sealing film 25 surface, and with the other end connected connected electrically to the semiconductor element in the element forming layer 21. <P>COPYRIGHT: (C)2008,JPO&INPIT |
