发明名称 METHOD AND APPARATUS FOR MANUFACTURING GROUP III NITRIDE COMPOUND SEMICONDUCTOR
摘要 PROBLEM TO BE SOLVED: To satisfactorily heat a raw material nitrogen gas in an Na-Ga flux method. SOLUTION: An openable and closable double-airtight vessel comprising a reaction vessel 100 and an outer vessel 200, both of which are adaptable to high-temperature high-pressure conditions, is used. The reaction vessel 100 is heated by heating units 31a, 31b and 31c that are placed inside the outer vessel. A nitrogen feed pipe 10 and an exhaust pipe 11 are connected to the reaction vessel 100, and feeding and exhaust of nitrogen are performed while adjusting the pressure inside the reaction vessel 100 to e.g. 100 atm by a control device, not illustrated. Here, when the nitrogen fed from the nitrogen feed pipe 10 passes through a heated part 10a that spirally proceeds around the periphery of the reaction vessel 100, it passes through it slowly enough to be heated to a temperature comparable to that of the reaction vessel 100 by the heating units 31a, 31b and 31c. This enables sufficient heating of the nitrogen before it is fed to the Na/Ga flux surface inside the reaction vessel 100. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007277058(A) 申请公布日期 2007.10.25
申请号 JP20060106860 申请日期 2006.04.07
申请人 TOYODA GOSEI CO LTD;NGK INSULATORS LTD;OSAKA UNIV 发明人 YAMAZAKI SHIRO;IWAI MAKOTO;SHIMODAIRA TAKANAO;SASAKI TAKATOMO;MORI YUSUKE;KAWAMURA SHIRO
分类号 C30B29/38;C30B9/00 主分类号 C30B29/38
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