| 摘要 |
PROBLEM TO BE SOLVED: To control a substrate bias-voltage so as not to bias outside the range of an allowable on-state current, and to reduce a leakage current in a substrate bias-voltage control circuit. SOLUTION: A semiconductor integrated circuit device has a first bias generating circuit 301, a second bias generating circuit 302, and a control circuit 28. The first bias generating circuit 301 generates the substrate bias-voltage of a p-channel transistor. The second bias generating circuit 302 generates the substrate bias voltage of an n-channel transistor. Circuits 10 and 15 are operated by applying the substrate bias-voltage of the p-channel transistor and the substrate bias-voltage of the n-channel transistor. A control circuit 28 independently controls the first bias generating circuit 301 and the second bias generating circuit 302 on the basis of the operating states of the circuits 10 and 15. COPYRIGHT: (C)2008,JPO&INPIT |
