| 摘要 |
PROBLEM TO BE SOLVED: To provide a light emitting device using an EA modulator which has a suitable detuning quantity in a 1,550 nm band and a quantum well structure suitable for long-distance optical communication of≥40 km, and to provide an inexpensive light source. SOLUTION: The quantum well structure having a well layer made of InGaAlAs, InGaAsP, or InGaAs and a barrier layer made of InGaAlAs or InAlAs is used for a light absorption layer of the EA modulator, and a detuning quantity at 25°C and the composition wavelength of the barrier layer in the quantum well structure used for the light absorption layer are suitably set to suppress insertion loss, secure an extinction ratio, and suppress chirping over a wide temperature range of -5 to 85°C. COPYRIGHT: (C)2008,JPO&INPIT
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